Instrumentation and uncertainty evaluation for absolute characterization of thin films and nanostructured surfaces in advanced optical metrology
Year of publicationPublished in:Metrologia
P. Hansen, L. Siaudinyte, S. Heidenreich, V. Soltwisch, H. Lokhorst, A. Tiwari, I. Makhotkin, A. Mattila, A. Lassila, S. Glabisch, S. Schröder, S. Brose, E. Nolot, T. Siefke, M. Asar, S. Memis, F. Yíldíz, M. Schiek, A. Rømer
Spectroscopic Ellipsometry of Plasmonic Gratings: Ideal Parameters for Sensing and Subpicometer Measurement Uncertainty
Year of publicationPublished in:ACS Omega
D. Mukherjee, S. Burger, T. Siefke, J. Gour, B. Bodermann, P. Petrik
Gold gratings were measured by spectroscopic ellipsometry in reflection mode and modeled by the finite element method to investigate the capabilities of optical dimensional metrology for plasmonic diffractive structures. The gratings were prepared by electron beam lithography using parameters determined by finite element simulations for significant variations of the amplitude ratio and phase shift of the polarized reflection coefficients to achieve high sensitivity for both the measurement of the grating dimensions and the sensing capabilities. The sensitivity largely depends on the values in the five-dimensional parameter space including the grating parameters such as the critical dimension, the period, and the thickness of the grating, as well as the measurement parameters comprising the wavelength and the angle of incidence. The best limit of detection values are in the picometer range for the critical dimension and the thickness of the overlayer, and ≈10⁻⁵ for the refractive index.
Fabrication of shallow EUV gratings on silicon by irradiation with helium ions
Year of publicationPublished in:Nanotechnology
J. Kaufmann, R. Ciesielski, K. Freiberg, M. Walther, A. Fernández Herrero, S. Lippmann, V. Soltwisch, T. Siefke, U. Zeitner
To accurately achieve structure height differences in the range of single digit nanometres is of great importance for the fabrication of diffraction gratings for the extreme ultraviolet range (EUV). Here, structuring of silicon irradiated through a mask by a broad beam of helium ions with an energy of 30 keV was investigated as an alternative to conventional etching, which offers only limited controllability for shallow structures due to the higher rate of material removal. Utilising a broad ion beam allows for quick and cost effective fabrication. Ion fluence of the irradiations was varied in the range of 10¹⁶ ... 10¹⁷ ions · cm⁻². This enabled a fine tuning of structure height in the range of 1.00 ± 0.05 to 20 ± 1 nm, which is suitable for shallow gratings used in EUV applications. According to transmission electron microscopy investigations the observed structure shape is attributed to the formation of point defects and bubbles/cavities within the silicon. Diffraction capabilities of fabricated elements are experimentally shown at the SX700 beamline of BESSY II. Rigorous Maxwell solver simulation based on the finite-element method and rigorous coupled wave analysis are utilised to describe the experimental obtained diffraction pattern.
Fabrication of low-loss lithium niobate on insulator waveguides on the wafer scale [Invited]
Year of publicationPublished in:Optical Materials Express
M. Younesi, T. Kasebier, I. Elmanov, Y. Li, P. Kumar, R. Geiss, T. Siefke, F. Eilenberger, F. Setzpfandt, U. Zeitner, T. Pertsch
We report on the wafer scale fabrication of single-mode low-loss lithium niobate on insulator waveguides utilizing a chemically amplified resist and an optimized dry etching method. The fabricated single-mode waveguides are free of residuals and re-deposition, with measured losses for straight waveguides around 2 dB/m (0.02 dB/cm). We present a method offering advantages for large-scale production mainly due to its cost-effectiveness and faster writing time. This work holds promise for advancing integrated photonics and optical communication technologies.
Characterization and discrimination of periodic nanostructures with scanning-free GEXRF
Year of publicationStatusReview pendingPublished in:Nanotechnology
N. Wauschkuhn, Y. Kayser, J. Baumann, J. Degenhardt, T. Siefke, V. Truong, V. Soltwisch, B. Beckhoff, P. Hönicke
Influence of line edge roughness in optical critical dimension metrology
Year of publicationPublished in:EOS Annual Meeting (EOSAM 2024): Naples, Italy, September 9-13, 2024
T. Siefke
We present the impact of line edge roughness (LER) on the optical critical dimension (OCD) metrology of nanostructures. The consideration of LER in OCD requires numerically expensive forward models and is therefore usually neglected. We present an analytical approach that allows estimation of the impact on the uncertainty. Systematic differences between CD measured by SEM and OCD were observed in different experiments. While SEM is basically sensitive to the local volume density, optical methods are sensitive to the permittivity of the material. We discuss an analytical upper bound on the contribution of the LER. For high index gratings, the contribution is as high as 3.7 nm for TM-polarized light and 1.2 nm for TE-polarized light, making this crucial for sub-nanometer metrology.
Comparison measurements for hybrid evaluation approaches in optical nanometrology
Year of publicationPublished in:EOS Annual Meeting (EOSAM 2024): Naples, Italy, September 9-13, 2024
T. Käseberg, B. Bodermann, M. Sturm, M. Wurm, T. Siefke, L. Siaudinyté, A. Rømer, P. Hansen, A. Tranum Rømer
In the pursuit of closing the gap between nanometrology and nanofabrication, we investigate the use of advanced optical far field methods for sub-wavelength parameter reconstruction. With the goal of establishing a hybrid evaluation scheme connecting different methods and including different information channels, we performed comparison measurements on a silicon line grating sample with buried as well as not buried surface relief lines. To this end, the results of our measurement are in good agreements with each other, and the collected structure data is feasible to be used for hybrid evaluation.
Mid-infrared dielectric laser acceleration in a silicon dual pillar structure
Year of publicationPublished in:Optics Express
L. Brückner, T. Chlouba, Y. Morimoto, N. Schönenberger, T. Shibuya, T. Siefke, U. Zeitner, P. Hommelhoff
Dielectric laser accelerators use near-infrared laser pulses to accelerate electrons at dielectric structures. Driving these devices with mid-infrared light should result in relaxed requirements on the electron beam, easier fabrication, higher damage threshold, and thus higher acceleration gradients. In this paper, we demonstrate dielectric laser acceleration of electrons driven with 10 µm light in a silicon dual pillar structure. We observe the acceleration of 27 keV electrons by 1.4 keV, corresponding to a 93 MeV/m acceleration gradient. The damage threshold of the structures of 3.3 ± 0.6 GV/m peak field is significantly higher than for near-infrared accelerators. The dual pillar acceleration structure itself even survived 5.2 ± 0.9 GV/m, the highest field strength we could achieve with the current system. This together with the larger structure acceptance bodes well for future dielectric laser accelerators driven with mid-infrared light.
Miniaturized fluorescence measurement system with novel dichroic beam splitter cubes with 3 by 3 by 3 cubic millimeters and special optical direction-selective filters
Year of publicationPublished in:Optical Design and Engineering IX
R. Müller, T. Siefke, U. Zeitner, K. Neckermann, M. Hintz, B. Ploss, M. Lappschies
Modeling of dimensions and sensing properties of gold gratings by spectroscopic ellipsometry and finite element method
Year of publicationPublished in:EOS Annual Meeting (EOSAM 2024): Naples, Italy, September 9-13, 2024
D. Mukherjee, S. Burger, T. Siefke, J. Gour, B. Bodermann, P. Petrik
Gold gratings were measured by spectroscopic ellipsometry and modeled by the finite element method to investigate the capabilities of optical dimensional metrology for plasmonic diffractive structures. The gratings were prepared by electron beam lithography using parameters determined by finite element simulations for significant variations of the amplitude ratio and phase shift of the polarized reflection coefficients to achieve high sensitivity for both the measurement of the grating dimensions and the sensing capabilities. Sub-nanometer sensitivity was shown to determine the grating dimensions and the thickness of an adsorbed layer to be detected in both traditional reflection and Kretschmann-Raether (KR) configurations. The sensitivity for the refractive index of the ambient was calculated to be 10−⁵ at best, which is not significantly better than the sensitivities for plane gold layers in KR configurations. However, in diffraction-based resonant setups, the high sensitivity dips can be shifted to a larger spectral range, which is highly significant in many applications. It was also revealed that 2D models assuming a perfect geometry fit the measured ellipsometry spectra only qualitatively, leaving room for model development in the future.
Year of publicationPublished in:Compact EUV & X-ray Light Sources: part of Optica High-Brightness Sources and Light-Driven Interactions Congress
J. Kaufmann, T. Siefke, C. Ronning, U. Zeitner
Novel phase masks with overlapping regions to fabricate fiber Bragg gratings for filtering sky emission lines
Year of publicationPublished in:Advances in Optical and Mechanical Technologies for Telescopes and Instrumentation VI
X. Luo, A. Rahman, K. Madhav, T. Siefke, R. Krämer, D. Richter, U. Zeitner, S. Nolte, M. Roth